SCHLIEREN PHOTOGRAPHY OF CURRENT FILAMENTS IN SURFACE-RELATED BREAKDOWN OF SILICON

Authors
HANKLA BJ WILLIAMS PF
Citation
Bj. Hankla et Pf. Williams, SCHLIEREN PHOTOGRAPHY OF CURRENT FILAMENTS IN SURFACE-RELATED BREAKDOWN OF SILICON, IEEE transactions on plasma science, 24(1), 1996, pp. 67-68
Citations number
5
Categorie Soggetti
Phsycs, Fluid & Plasmas
Journal title
IEEE transactions on plasma science → ACNP
ISSN journal
00933813
Volume
24
Issue
1
Year of publication
1996
Pages
67 - 68
Database
ISI
SICI code
0093-3813(1996)24:1<67:SPOCFI>2.0.ZU;2-A
Abstract
We have used a modified Schlieren technique to photograph current fila ments formed inside silicon during the very early stages of surface-re lated breakdown. We believe that the features we see are due to heatin g in the filamentary channel. The very rapid formation of these channe ls suggests that they result from streamer-like phenomena in the bulk silicon.