MOLECULAR-DYNAMICS SIMULATIONS OF DIRECT REACTIVE ION ETCHING - SURFACE ROUGHENING OF SILICON BY CHLORINE

Authors
BARONE ME ROBINSON TO GRAVES DB
Citation
Me. Barone et al., MOLECULAR-DYNAMICS SIMULATIONS OF DIRECT REACTIVE ION ETCHING - SURFACE ROUGHENING OF SILICON BY CHLORINE, IEEE transactions on plasma science, 24(1), 1996, pp. 77-78
Citations number
7
Categorie Soggetti
Phsycs, Fluid & Plasmas
Journal title
IEEE transactions on plasma science → ACNP
ISSN journal
00933813
Volume
24
Issue
1
Year of publication
1996
Pages
77 - 78
Database
ISI
SICI code
0093-3813(1996)24:1<77:MSODRI>2.0.ZU;2-Q
Abstract
During plasma etching, surfaces can become roughened because of a vari ety of mechanisms, One source of roughness is illustrated with molecul ar dynamics simulations of reactive ion etching of a silicon surface w ith 25-eV Cl+. The three-dimensional (3-D) image of the chlorinated su rface and near-surface region is illustrated.