AN ACCURATE LARGE-SIGNAL PHYSICAL MODEL FOR MICROWAVE GAAS ALGAAS HBTS/

This article describes, for the first time, the development of a two-d imensional physical model which accurately characterizes the DC, bias dependent small-signal, and large-signal power characteristics of GaAs /AlGaAs HBTs. This model is implemented using a commercial physical de vice simulator. It is shown that the physical model can accurately pre dict the output power, gain, and efficiency of GaAs HBTs, even well in to compression where device nonlinearities are significant. A complete description of the model is provided including a discussion of the re levant physical processes, the simulation device geometry, the appropr iate material parameters, and the methods for scaling to multifinger d evices. (C) 1996 John Wiley & Sons, Inc.