MEASUREMENT OF SPONTANEOUS-EMISSION ENHANCEMENT NEAR THE ONE-DIMENSIONAL PHOTONIC BAND-EDGE OF SEMICONDUCTOR HETEROSTRUCTURES

Authors
TOCCI MD SCALORA M BLOEMER MJ DOWLING JP BOWDEN CM
Citation
Md. Tocci et al., MEASUREMENT OF SPONTANEOUS-EMISSION ENHANCEMENT NEAR THE ONE-DIMENSIONAL PHOTONIC BAND-EDGE OF SEMICONDUCTOR HETEROSTRUCTURES, Physical review. A, 53(4), 1996, pp. 2799-2803
Citations number
35
Categorie Soggetti
Physics
Journal title
Physical review. A → ACNP
ISSN journal
10502947
Volume
53
Issue
4
Year of publication
1996
Pages
2799 - 2803
Database
ISI
SICI code
1050-2947(1996)53:4<2799:MOSENT>2.0.ZU;2-4
Abstract
We present results of an experimental investigation into alteration of the spontaneous emission spectrum of GaAs from within one-dimensional photonic band gap (PEG) structures. The PEG samples are multilayer Al As/Al0.2Ga0.8As/GaAs p-i-n light-emitting diodes, with layers arranged as a distributed Bragg reflector. The emission spectra normal to the layers are measured, and we use a simple method to model the power spe ctrum of spontaneous emission from within the structures. We find that the emitted power is enhanced by a factor of 3.5 at the frequencies n ear the photonic band edge.