EFFECT OF H-2 CONCENTRATION ON RF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF BORON-NITRIDE COATINGS FROM THE BCL3-N-2-H-2-AR GAS SYSTEM

Authors
SCHAFFNIT C DELPUPPO H HUGON R THOMAS L MORETTO P ROSSI F PAULEAU Y
Citation
C. Schaffnit et al., EFFECT OF H-2 CONCENTRATION ON RF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF BORON-NITRIDE COATINGS FROM THE BCL3-N-2-H-2-AR GAS SYSTEM, Surface & coatings technology, 80(1-2), 1996, pp. 13-17
Citations number
8
Categorie Soggetti
Materials Science, Coatings & Films
Journal title
Surface & coatings technology → ACNP
ISSN journal
02578972
Volume
80
Issue
1-2
Year of publication
1996
Pages
13 - 17
Database
ISI
SICI code
0257-8972(1996)80:1-2<13:EOHCOR>2.0.ZU;2-D
Abstract
Boron nitride coatings were obtained by r.f. plasma-enhanced chemical vapour deposition (PECVD) from a BCl3-N-2-H-2-Ar mixture. Preliminary results on the effect of the hydrogen content in the gas mixture are r eported. The characterization of the coatings and the gas phase analys is are discussed. Variations in the hydrogen content in the plasma can account for the decrease in oxygen content, increase in chlorine cont ent and change in the B/N ratio in the deposited material. The morphol ogy of the coatings also depends on the hydrogen content in the gas ph ase.