REMOTE MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF INSULATING COATINGS (SIO2) ON METALLIC SUBSTRATES - FILM PROPERTIES

Silicon dioxide thin films were prepared on stainless steel substrates by remote microwave plasma-enhanced chemical vapour deposition (RMPEC VD) using an oxygen plasma and a mixture of 5% silane in argon injecte d in the afterglow. The influence of the process parameters on the fil m properties was investigated by Fourier transform infrared (FTIR) spe ctroscopy and electron recoil detection analysis (ERDA). The content o f hydrogen was deduced. The electrical insulation was analysed in term s of the dielectric constant, loss factor (tan delta), resistivity and dielectric strength of the films. An increase in temperature or micro wave power leads to a decrease in hydrogen incorporation and improves the insulation properties. Moreover, the use of a radiofrequency (r.f. ) substrate bias voltage of 200 V aids the desorption of hydrogen.