CRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE THIN-FILMS BY LASER TREATMENT

Amorphous hydrogenated silicon carbide (a-SiC:H) thin films were cryst allized by laser treatment. The samples, with a carbon content in the range 0%-50%, were deposited onto Si (100) wafers by plasma enhanced c hemical vapor deposition. Various techniques, such as X-ray photoelect ron spectroscopy (XPS), infrared (IR) transmission spectroscopy, optic al microscopy, and microhardness measurements were used to characteriz e the laser-induced composition evolution and crystallization processe s. The characteristics of the crystallized samples are promising for a pplication as protective coatings for devices used in severe operating conditions.