GROWTH OF QUANTUM-WIRE STRUCTURES BY SELECTIVE-AREA CHEMICAL BEAM EPITAXY

Selective area growth on silicon dioxide masked gallium arsenide subst rates by chemical beam epitaxy is used to fabricate inverted V-shaped mesas. Indium gallium arsenide quantum wells grown on top of these mes as form quantum wire structures. The faceted mesa sidewalls are descri bed as a function of substrate temperature and V/III ratio in terms of a simple geometric model. The photoluminescence spectra show that the wire structure peak is shifted to longer wavelength compared to unpat terned substrates, for all growth temperatures. This shift is explaine d by the migration of indium. For low temperature growth, a second pea k due to sidewall quantum wells is observed.