OXIDATION BEHAVIOR OF AL-W ALLOY-FILMS DEPOSITED ON CU AS A PASSIVATION LAYER

Authors
TAKEYAMA M ICHIKAWA T NOYA A
Citation
M. Takeyama et al., OXIDATION BEHAVIOR OF AL-W ALLOY-FILMS DEPOSITED ON CU AS A PASSIVATION LAYER, Thin solid films, 272(1), 1996, pp. 18-20
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
272
Issue
1
Year of publication
1996
Pages
18 - 20
Database
ISI
SICI code
0040-6090(1996)272:1<18:OBOAAD>2.0.ZU;2-N
Abstract
The oxidation behavior of Al-W alloy films (500 Angstrom) deposited on Cu as a passivation layer to protect Cu from oxidation has been exami ned by Auger electron spectroscopy and X-ray photoelectron spectroscop y. The preferential oxidation of Al in the Al-W alloy protects underly ing W and Cu from oxidation, and simultaneously, Cu is rejected by the formation of Al2O3 within the system, resulting in a successful separ ation of Cu from the surface oxidized layer due to the oxidation even after heating at 500 degrees C for 1 h in air.