SCANNING-TUNNELING-MICROSCOPY STUDY OF ANTIPHASE BOUNDARIES ON THE (001) SURFACE OF HOMOEPITAXIAL DIAMOND FILMS

Citation
Yl. Kuang et al., SCANNING-TUNNELING-MICROSCOPY STUDY OF ANTIPHASE BOUNDARIES ON THE (001) SURFACE OF HOMOEPITAXIAL DIAMOND FILMS, Thin solid films, 272(1), 1996, pp. 49-51
Citations number
14
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
272
Issue
1
Year of publication
1996
Pages
49 - 51
Database
ISI
SICI code
0040-6090(1996)272:1<49:SSOABO>2.0.ZU;2-Z
Abstract
Homoepitaxial diamond films have been studied using scanning tunneling microscopy. Boron-doped films were grown on diamond (001) substrates by microwave plasma assisted chemical vapor deposition. Surface morpho logy showed a dimer-type 2X1 reconstructed surface structure with anti phase boundaries on each domain. Single step edges with inequivalent s hape were along the (110) directions. Single steps where dimer rows on the upper terrace are normal to the step edge are ragged and the step s where dimer rows are parallel to the step edge are straight, indicat ing that the steps have different formation energies. To our knowledge , the antiphase boundaries are to be observed for the first time on a homoepitaxially grown diamond (001) surface. Atomic images revealed th at two different types of antiphase boundaries run parallel to or perp endicular to the dimer rows where dimer rows shift by only one lattice constant of the diamond (001) surface.