EPITAXIAL-GROWTH OF ALPHA-FE FILMS ON CAF2(111) SI(111) STRUCTURES/

Epitaxial Fe films with the (110) orientation were deposited on a CaF2 (111) buffer layer on Si(111) substrates. The structural characterizat ion of the epitaxial films included conventional and grazing angle X-r ay diffraction experiments, rocking curve crystal quality analysis, X- scans as well as scanning electron microscopy. The results show the in creasing quality of the Fe films with substrate temperature during dep osition. We discuss the crystal quality and the orientational relation ships of the Fe(110)/CaF2(111)/Si(111) system as compared with the Fe( 222)/Si(111) system.