IONIZED-CLUSTER-BEAM DEPOSITION AND ELECTRICAL BISTABILITY OF C-60-TETRACYANOQUINODIMETHANE THIN-FILMS

We report an ionized-cluster-beam (ICE) deposition and the electrical bistability of C-60-tetracyanoquinodimethane (TCNQ) thin films. The fi lms are fabricated by using an ionized-cluster-beam deposition method in a high vacuum system. The as-deposited films were characterized by transmission electron microscopy and optical absorption spectroscopy, which verified the formation of the charge-transfer complex system in C-60-TCNQ thin films and the microstructure of these thin films. The s tructure and theelectrical property of the ICE deposited Ag-TCNQ thin films are also presented. The possible conductive mechanism of these I CE deposited thin films is discussed in the letter. (C) 1996 American Institute of Physics.