SELECTIVE-AREA GROWTH OF METAL NANOSTRUCTURES

Nanometer-scale metal lines are fabricated onto Si(100) substrates by scanning tunneling microscope (STM) based lithography and subsequent c hemical vapor deposition. An STM tip is first used to define areas for metal layer growth by electron stimulated desorption of adsorbed hydr ogen. Exposure to Fe(CO)(5) at 275 degrees C results in preferential d eposition of Fe onto Si dangling bond sites (i.e., depassivated areas defined by the STM tip), while the monohydride resist remains intact i n surrounding areas. Fe metal lines with widths similar to 10 nm are c onstructed using this selective-area, autocatalytic growth technique.