EFFECT OF IMPLANTATION DOSE ON PHOTOLUMINESCENCE DECAY TIMES IN INTERMIXED GAAS ALGAAS QUANTUM-WELLS/

The effect of ion implantation induced intermixing on the effective ra diative lifetimes in GaAs/AlGaAs quantum wells is investigated using t he technique of time-resolved photoluminescence (TRPL), Below the crit ical dose, the carrier lifetimes appear enhanced by the processing alt hough no changes are discernible in the continuous wave photoluminesce nce (CWPL) spectra. Above the critical dose, carrier lifetimes are red uced by residual defects created in the intermixed wells by the implan tation procedure. These observations demonstrate the greater sensitivi ty of TRPL over CWPL in detecting residual damage produced by processi ng quantum well material.