F. Fontaine et al., BORON IMPLANTATION IN-SITU ANNEALING PROCEDURE FOR OPTIMAL P-TYPE PROPERTIES OF DIAMOND, Applied physics letters, 68(16), 1996, pp. 2264-2266
Record values for high Hall mobility and for low compensation ratio of
boron doped diamond by ion implantation are reported. These are achie
ved, following the suggestion by Prins, by low dose Boron implantation
into cold diamond (-97 degrees C) and in situ rapid heating (1050 deg
rees C for 10 min) and by a further anneal at higher temperature (1450
degrees C for 10 min). Detailed evaluation of Hall effect data and of
the temperature dependence of the resistivity over a wide temperature
range (200 to 700 K) prove that this implantation/annealing scheme yi
elds p-type behavior of the implanted layer with the highest hole mobi
lity (385 cm(2)/V s, at room temperature) and the lowest compensation
ratio (0.05) ever reported for diamond doped by ion implantation. (C)
1996 American Institute of Physics.