ELECTRICAL-PROPERTIES OF SRBI(2)TA(2)OG THIN-FILMS AND THEIR TEMPERATURE-DEPENDENCE FOR FERROELECTRIC NONVOLATILE MEMORY APPLICATIONS

This letter addresses the temperature dependence of some of the electr ical properties of 0.2-mu m-thick SrBi2Ta2O9 capacitors with platinum electrodes on silicon wafers for nonvolatile memory applications. Inve stigations of the remanent polarization, the nonvolatile polarization and the coercive field with pulse amplitude were made at different tem peratures. The endurance of the polarization as a function of temperat ure is reported. Up to 125 degrees C, the capacitors show less than a 10% reduction in polarization from their initial values following 1x10 (12) cycles. (C) 1996 American Institute of Physics.