TEMPERATURE-DEPENDENT CURRENT-VOLTAGE CHARACTERISTICS OF FULLY PROCESSED BA0.7SR0.3TIO3 CAPACITORS INTEGRATED IN A SILICON DEVICE

Temperature-dependent current-voltage characteristics of fully process ed Ba0.7Sr0.3TiO3 thin film capacitors integrated in a charge-coupled device delay-line processor as bypass capacitors were studied. The thi n film capacitors with a film thickness of 185 nm were formed by metal -organic decomposition processing. The leakage current measured after completion of the integration process was 1 to 2 orders of magnitude h igher than that measured after capacitor patterning. The leakage curre nt at low voltages (<1 V, 50 kV/cm) indicated ohmic conduction within a measured temperature range of 300-423 K. At high voltages (>10 V, 50 0 kV/cm), the Schottky mechanism plays a dominant role in leakage curr ent, while the Frenkel-Poole emission begins to contribute to the leak age current as the temperature is elevated.