INFLUENCE OF ZN-DOPING ON THE ELECTRONIC RAMAN-SCATTERING OF YBA2CU3O7-DELTA

Citation
A. Matic et al., INFLUENCE OF ZN-DOPING ON THE ELECTRONIC RAMAN-SCATTERING OF YBA2CU3O7-DELTA, Journal of physics and chemistry of solids, 56(12), 1995, pp. 1835-1835
Citations number
1
Categorie Soggetti
Physics, Condensed Matter",Chemistry
ISSN journal
00223697
Volume
56
Issue
12
Year of publication
1995
Pages
1835 - 1835
Database
ISI
SICI code
0022-3697(1995)56:12<1835:IOZOTE>2.0.ZU;2-3
Abstract
We present temperature dependent Raman measurements on single crystal YBa2(Cu1-xZnx)(3)O-7-delta with x = 0, 1.5%, and 3.5%. The superconduc tivity induced redistribution of the electronic background in the B-1g symmetry scattering configuration was found to disappear already for the smallest Zn concentration. In contrast, for A(1g) symmetry the red istribution is observed for all samples even though the magnitude decr eases with increasing doping. The peak position in A(1g) symmetry decr eases with increasing Zn doping and scales approximately with T-c, ind icating a superconducting gap energy of 2 Delta/k(B)T(c) approximate t o 5.0.