SIMULATION OF TRANSIENT THERMAL EFFECTS DURING GTO TURN-OFF

Authors
MAWBY PA EVANS M TOWERS MS
Citation
Pa. Mawby et al., SIMULATION OF TRANSIENT THERMAL EFFECTS DURING GTO TURN-OFF, Microelectronics, 27(2-3), 1996, pp. 217-229
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics → ACNP
ISSN journal
00262692
Volume
27
Issue
2-3
Year of publication
1996
Pages
217 - 229
Database
ISI
SICI code
0026-2692(1996)27:2-3<217:SOTTED>2.0.ZU;2-N
Abstract
A rigorous two-dimensional physical model of the GTO thyristor is pres ented. The model includes the fully coupled effects of self-heating on the device during the turn-off phase of operation. The effects of spa tially-dependent minority carrier lifetime, Auger recombination and ca rrier-carrier scattering are included in the model. Also, the effect o f the temperature gradient on the internal current has been included. The simulation has been carried out within a realistic external circui t environment.