An experimental comparison between the RBSOA performances of a BMFET a
nd two families of power BJTs is presented. All the measurements were
performed by means of a non-destructive tester which allowed the acqui
sition of a homogeneous set of measurements, keeping stray parameters
under control. The behaviour of the devices is put in relation to the
test conditions and it is shown that the size of the safe region of op
eration is a function of the geometrical parameters of the device, amo
ng which there are metallization lay-out and geometry of its elementar
y cell. Moreover, superior RBSOA performance of BMFET due to geometry
of base diffusion, which was predicted by simulation, is experimentall
y confirmed.