BMFET VERSUS BJT IN REVERSE BIAS SAFE OPERATIONS

Citation
G. Busatto et L. Fratelli, BMFET VERSUS BJT IN REVERSE BIAS SAFE OPERATIONS, Microelectronics, 27(2-3), 1996, pp. 243-250
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00262692
Volume
27
Issue
2-3
Year of publication
1996
Pages
243 - 250
Database
ISI
SICI code
0026-2692(1996)27:2-3<243:BVBIRB>2.0.ZU;2-L
Abstract
An experimental comparison between the RBSOA performances of a BMFET a nd two families of power BJTs is presented. All the measurements were performed by means of a non-destructive tester which allowed the acqui sition of a homogeneous set of measurements, keeping stray parameters under control. The behaviour of the devices is put in relation to the test conditions and it is shown that the size of the safe region of op eration is a function of the geometrical parameters of the device, amo ng which there are metallization lay-out and geometry of its elementar y cell. Moreover, superior RBSOA performance of BMFET due to geometry of base diffusion, which was predicted by simulation, is experimentall y confirmed.