DOMINANT ROLE OF E' CENTERS IN X-RAY-INDUCED, VISIBLE LUMINESCENCE INHIGH-PURITY AMORPHOUS SILICAS

Authors
MILLER AJ LEISURE RG MASHKOV VA GALEENER FL
Citation
Aj. Miller et al., DOMINANT ROLE OF E' CENTERS IN X-RAY-INDUCED, VISIBLE LUMINESCENCE INHIGH-PURITY AMORPHOUS SILICAS, Physical review. B, Condensed matter, 53(14), 1996, pp. 8818-8820
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
53
Issue
14
Year of publication
1996
Pages
8818 - 8820
Database
ISI
SICI code
0163-1829(1996)53:14<8818:DROECI>2.0.ZU;2-Y
Abstract
Detailed measurements of the x-ray-dose dependence of spectrally resol ved x-ray-induced luminescence in bulk high-purity alpha-SiO2 were per formed. The dose dependence of the luminescence intensity is compared to that of the paramagnetic E'(gamma)-center concentration in two type s of silicas. Clear experimental evidence is presented that the main f eatures of the 2.6 and 2.75 eV luminescence bands are due to the same radiation-induced defect, and that this defect is related to the E'(ga mma) center.