MODEL OF C-AXIS RESISTIVITY OF HIGH-T-C CUPRATES

We propose a simple model which accounts for the major features and sy stematics of experiments on the c,=axis resistivity, p(c) for La-2-xSr xCuO4, YBa(2)Cu(3)0(6+x), and Bi2S2CaCu2O8. We argue that the c-axis r esistivity can be separated into contributions from in-plane dephasing and the c-axis ''barrier'' scattering processes, with the low-tempera ture semiconductorlike behavior of p(c) arising from the suppression o f the in-plane density of stares measured by in-plane magnetic Knight shift experiments. We report on predictions for p(c) in impurity-doped YBa2CU3O6+x materials.