SI1-XGEX MIXED-CRYSTALS GROWN BY PULLING-DOWN TECHNIQUE WITH MULTI-CAPILLARY CHANNELS

Si1-xGex mixed crystals with 5 at% Ge concentration have been grown by the pulling-down technique using a crucible with multi-capillary chan nels. The unique feature of the technique is that Ge solute concentrat ion of the small molten zone is maintained constant due to the conditi on of no back diffusion of solute through the capillary channels, and that tho diffusion-controlled solute transport causes tile effective d istribution coefficient to be unity. The Ge concentration was measured by the electron probe microanalysis and observed to be homogeneous al ong both the longitudinal and radial directions. The two-dimensional d istribution on the whole cross section was also found to be uniform.