FORMATION OF MISFIT DISLOCATIONS WITH INPLANE BURGERS VECTORS IN BORON DIFFUSED (111)SILICON

The study of different stages of boron diffusion by plan-view and cros s-sectional transmission electron microscopy shows that, as in the cla ssical model of Matthews, misfit dislocation half-loops are initially generated at the surface. The Burgers vector of the dislocation half-l oop is inclined with respect to the surface and thus the initial misfi t dislocations are not very efficient in strain relaxation. As the dif fusion proceeds, non-parallel dislocations interact and give rise to p roduct segments that have in-plane Burgers vectors parallel to the sur face. Based on the observations, a model is presented to elucidate the details of these interactions and the formation of more efficient mis fit dislocations from the less-efficient inclined ones.