STUDY OF ELECTRICAL-CONDUCTION PROPERTIES OF NBN THIN-FILMS USING NBNMGO/NBN DOUBLE-TUNNEL JUNCTIONS/

Authors
SU H YOSHIKAWA N SUGAHARA M
Citation
H. Su et al., STUDY OF ELECTRICAL-CONDUCTION PROPERTIES OF NBN THIN-FILMS USING NBNMGO/NBN DOUBLE-TUNNEL JUNCTIONS/, Superconductor science and technology, 9(4A), 1996, pp. 152-155
Citations number
8
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter
Journal title
Superconductor science and technology → ACNP
ISSN journal
09532048
Volume
9
Issue
4A
Year of publication
1996
Pages
152 - 155
Database
ISI
SICI code
0953-2048(1996)9:4A<152:SOEPON>2.0.ZU;2-#
Abstract
We have investigated the electrical conduction properties of very thin NbN films whose sheet resistance is near the critical resistance R(c) = h/4e(2) = 6.45 k Omega. the superconducting energy gaps of the film s were measured using NbN/MgO/NbN double-tunnel junctions with a very thin NbN intermediate electrode. The results show that the energy gap disappears when the superconductor-insulator transition occurs, retain ing the BCS relationship between the energy gap and the critical tempe rature. The insulating transition in highly resistive films is thought to be due to the charging effect in intergrain tunnel junctions.