We have developed a processing technique for Bi2Sr2CaCu2O8+x Single cr
ystals to study current-voltage (I-V) characteristics along the c-axis
. A planar device with a mesa is fabricated by making use of photolith
ography, leading to advantages in preparation compared with a standard
two-probe technique. Multiple branches in the I-V curves and magnetic
field dependence of the critical current support the intrinsic Joseph
son junction model, consistently with the previous result obtained by
the two-probe technique.