RELIABILITY EVALUATION OF THIN GATE OXIDE USING A FLAT CAPACITOR TESTSTRUCTURE

Authors
KATSUMATA M MITSUHASHI J KOBAYASHI K MASHIKO Y KOYAMA H
Citation
M. Katsumata et al., RELIABILITY EVALUATION OF THIN GATE OXIDE USING A FLAT CAPACITOR TESTSTRUCTURE, IEICE transactions on electronics, E79C(2), 1996, pp. 206-210
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEICE transactions on electronics → ACNP
ISSN journal
09168524
Volume
E79C
Issue
2
Year of publication
1996
Pages
206 - 210
Database
ISI
SICI code
0916-8524(1996)E79C:2<206:REOTGO>2.0.ZU;2-3
Abstract
A test structure has been developed with very low-level current measur ement technique and is used to evaluate a very small change of leakage current caused by the trapping and detrapping of electrons or holes. The present technique realizes detection of very low levels of leakage current (minimum detectable current is 5 x 10(-17) A), which is neces sary in the course of evaluating gate oxides. This technique is very u seful for the evaluation of retention characteristics and stress induc ed degradation of gate oxides.