THE INTERACTION OF OXYGEN WITH DISLOCATION CORES IN SILICON

Authors
UMERSKI A JONES R
Citation
A. Umerski et R. Jones, THE INTERACTION OF OXYGEN WITH DISLOCATION CORES IN SILICON, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 67(4), 1993, pp. 905-915
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties → ACNP
ISSN journal
01418610
Volume
67
Issue
4
Year of publication
1993
Pages
905 - 915
Database
ISI
SICI code
0141-8610(1993)67:4<905:TIOOWD>2.0.ZU;2-G
Abstract
The interaction of O with 90-degrees partial dislocations in Si is exa mined using a cluster method with local-density-functional pseudo-pote ntial theory. We consider several states of O at dislocation cores fir stly which are normally reconstructed and secondly which contain solit onic reconstructed bonding patterns. This topic has been the subject o f a number of experiments by Sumino and his collaborators, and our ove rall findings support his conclusions.