GROWTH, CHARACTERIZATION AND ELECTRICAL-PROPERTIES OF GADOLINIUM SILICIDE THIN-LAYERS

Authors
TRAVLOS A ALOUPOGIANNIS P ROKOFYLLOU E PAPASTAIKOUDIS C TRAVERSE A WEBER G
Citation
A. Travlos et al., GROWTH, CHARACTERIZATION AND ELECTRICAL-PROPERTIES OF GADOLINIUM SILICIDE THIN-LAYERS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 67(4), 1993, pp. 485-495
Citations number
33
Categorie Soggetti
Physics, Applied
Journal title
Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties → ACNP
ISSN journal
09586644
Volume
67
Issue
4
Year of publication
1993
Pages
485 - 495
Database
ISI
SICI code
0958-6644(1993)67:4<485:GCAEOG>2.0.ZU;2-L
Abstract
The growth of gadolinium silicide (GdSi2-x) layers on Si(100) has been studied by scanning electron microscopy, X-ray diffractometry, Ruther ford backscattering spectrometry and nuclear reaction analysis techniq ues. The GdSi2-x layers are polycrystalline with an orthorhombic struc ture and a large number of Si vacancies. Non-uniform spatial diffusion of Si atoms into the metal film leads to a columnar growth of the sil icide layer with rough surface and interface. Better layers are obtain ed with the deposition of multilayer structures of Gd and amorphous Si . Resistivity measurements in the temperature range 4.6-300 K show tha t the GdSi2-x layers are metallic with a magnetic ordering transition at 19 K.