CREATION PROCESS OF THERMALLY-INDUCED DEFECTS IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON CARBON-FILMS

The creation process of thermally induced defects in B-doped hydrogena ted amorphous SixC1-x samples has been studied by measuring the anneal ing time dependence of dark d.c. conductivity. The results show that t he creation process of thermally induced defects exhibits a stretched- exponential-like form; the equilibrium values increase with increasing annealing temperature while the relaxation time decreases with increa sing annealing temperature. In particular, the stretched-exponential f actor also decreases with increasing annealing temperature, which is c ontrary to that of the annealing process of frozen-in defects. A model involving two different trapping processes of transportable H in the defect creation and annealing processes is proposed to explain this re sult.