THIN-FILMS AND DEVICES OF DIAMOND, SILICON-CARBIDE AND GALLIUM NITRIDE

Authors
DAVIS RF
Citation
Rf. Davis, THIN-FILMS AND DEVICES OF DIAMOND, SILICON-CARBIDE AND GALLIUM NITRIDE, Physica. B, Condensed matter, 185(1-4), 1993, pp. 1-15
Citations number
113
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
185
Issue
1-4
Year of publication
1993
Pages
1 - 15
Database
ISI
SICI code
0921-4526(1993)185:1-4<1:TADODS>2.0.ZU;2-T
Abstract
The extreme properties of diamond, SiC and GaN provide combinations of attributes for high-power, -temperature, -frequency and optoelectroni c applications. The methods of deposition, the results of chemical, st ructural, microstructural and electrical characterization and device d evelopment are reviewed for thin films of these three materials. Probl ems and areas of future research are also noted.