CVD GROWTH AND CHARACTERIZATION OF SINGLE-CRYSTALLINE 6H-SILICON CARBIDE

Authors
KARMANN S HABERSTROH C ENGELBRECHT F SUTTROP W SCHONER A SCHADT M HELBIG R PENSL G STEIN RA LEIBENZEDER S
Citation
S. Karmann et al., CVD GROWTH AND CHARACTERIZATION OF SINGLE-CRYSTALLINE 6H-SILICON CARBIDE, Physica. B, Condensed matter, 185(1-4), 1993, pp. 75-78
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
185
Issue
1-4
Year of publication
1993
Pages
75 - 78
Database
ISI
SICI code
0921-4526(1993)185:1-4<75:CGACOS>2.0.ZU;2-7
Abstract
Homoepitaxial growth of 6H-SiC layers is performed at 1600-degrees-C u sing propane and silane as source gases. The influence of the growth p arameters, temperature and gas concentrations on the growth rate is di scussed. The films are examined by structural, optical and electrical characterization techniques. Unintentionally doped layers show donor c oncentrations of (N(D) - N(A)) almost-equal-to 3 x 10(15) cm-3. An ele ctron mobility of 370 cm2/V s at room temperature and of almost 11 000 cm2/V s is observed at T = 45 K.