MICROSCOPIC CHARACTERIZATION OF HEAVY-ION IMPLANTED DIAMOND

The annealing of implantation damage in diamond after heavy-ion implan tation of In-111 at 295 K and the lattice location of the implanted io ns have been investigated using emission channeling (EC) and the pertu rbed gammagamma angular correlation technique (PAC). These techniques supply information on the lattice site occupied by the implanted atom and about defects present near the implanted dopant. After annealing a t 1473 K more than 60% of the ions occupy substitutional lattice sites but a large variety of defects is still present in the next neighborh ood of the probe atom. An annealing stage is observed above 1000 K.