RESONANT PHOTOLUMINESCENCE MEASUREMENTS IN AS-DOPED AND P-DOPED ZNTE EPILAYERS

The near-gap photoluminescence (PL) of MOVPE ZnTe epilayers grown on ( 001) GaAs substrates has been extensively studied using resonant-excit ation methods. Heteroepitaxial ZnTe layers show a small biaxial strain which splits excitonic transitions. We obtained the Luttinger paramet er gamma1 = 3.8 from transition of the split free exciton 1s and 2s le vels. Shallow acceptor states were observed in free standing As- and P -doped ZnTe layers and the Luttinger parameters gamma2, = 0.72 and gam ma3, = 1.3 were derived. The magnetic field splitting of the 1S3/2 acc eptor ground state unambiguously identifies the acceptor bound exciton line I1a as double light-hole state (A(al)0, X(l)). Furthermore the m agnetic parameters kappa(A) = -0.27 and q(A) = -0.015 were determined.