DEFECTS, OPTICAL-ABSORPTION AND ELECTRON-MOBILITY IN INDIUM AND GALLIUM NITRIDES

We review the experimental evidence for the origin and location of the four native point defects in the wide PP semiconducting indium and ga llium nitrides and compare then with experimental predictions. The don or triplets associated with nitrogen vacancies and the deep compensati ng centres ascribed to the antisite substitutional defects appear to h ave the greatest effect on macroscopic properties, apparently includin g the four luminescent bands in GaN. Calculated mobilities in InN and GaN depend principally on ionised impurity and polar-mode phonon scatt ering. We reconcile these results with experimental data and point out the consequences for improvements in material growth.