ANNEALING BEHAVIOR OF IN IMPURITIES IN SIC AFTER ION-IMPLANTATION

The annealing behaviour of indium impurities in SiC after ion implanta tion, and the formation and stability of complexes at In in SiC have b een studied by perturbed angular correlation (PAC) spectroscopy for th e first time. Samples of 6H-SiC and 3C-SiC single crystals were doped with radioactive In-111 in by ion implantation. The implantation-induc ed radiation damage was annealed by furnace treatment up to 1250 K. In the 6H-modification two different electric field gradients (EFG) char acterized by the quadrupole coupling constants nu(Q1)= 36 (1) MHz, nu( Q2) = 63 (2) MHz and asymmetry parameters eta1 = 0.00 (10), eta2 = 0.6 5 (10), respectively, were observed. The EFG, is assigned to the latti ce EFG experienced by the probe atoms at carbon sublattice sites. The EFG, indicates the formation of a distinct In-defect complex, which va nishes at temperatures above 320 K. In the 3C-modification no distinct EFG could be detected.