CHARACTERIZATION OF ZNSE AND OTHER II-VI SEMICONDUCTORS BY RADIOACTIVE DOPANTS

In the II-VI compounds ZnS, CdS, ZnSe, CdSe, ZnTe and CdTe doped with In, the formation of In(M)-V(M) pairs is shown to occur using the radi oactive dopant In-111 along with the perturbed gammagamma angular corr elation technique. For CdS and ZnSe, the migration energy of the metal lic vacancy defect V(M) and its binding energy to the donor In is dete rmined. The creation of V(M) defects under different experimental cond itions is investigated, such as stoichiometry, temperature, electron i rradiation and doping with Li atoms.