ELECTRONIC-STRUCTURE AND DYNAMIC BEHAVIOR OF DIFFERENT BOUND-EXCITON COMPLEXES IN ZNSE BULK CRYSTALS

High-quality ZnSe crystals grown by the high-pressure Bridgman method show emissions of the free exciton (X) in the excitonic energy range a s well as bound exciton lines I1 and I2. The I2i-lines, which are obse rved in excitation spectra of the (D0, X)-complex, are explained takin g into account a three-particle model with excited \n, l] hole states for the (D0, X)-complex. Otherwise the (A0, X) ground state is split b y the (j, j)-coupling of the two GAMMA8-holes into two separate levels . From time-resolved luminescence the specified rise and decay times o f different bound excitons complexes are determined.