BAND-STRUCTURE AND HIGH-PRESSURE PHASE-TRANSITION IN GAN, ALN, INN AND BN

Citation
I. Gorczyca et Ne. Christensen, BAND-STRUCTURE AND HIGH-PRESSURE PHASE-TRANSITION IN GAN, ALN, INN AND BN, Physica. B, Condensed matter, 185(1-4), 1993, pp. 410-414
Citations number
33
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
185
Issue
1-4
Year of publication
1993
Pages
410 - 414
Database
ISI
SICI code
0921-4526(1993)185:1-4<410:BAHPIG>2.0.ZU;2-S
Abstract
The linear muffin-tin orbital method is used to calculate the band str ucture and to investigate the structural properties of III-V nitrides under high pressure. The obtained pressure coefficients of energy gaps , dielectric constants, bulk moduli and phase transition pressures are compared with existing theoretical and experimental data.