RAMAN-SCATTERING IN INXGA1-XAS GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY/

Results concerned with the measurement of internal strain in pseudomor phic InxGa1-xAs/GaAs structures are reported, The Raman phonon wavenum bers of strain-relaxed alloy samples over a wide range of composition x are presented. Raman scattering experiments were carried out to meas ure the optical lattice modes of a series of InxGa1-xAs/GaAs strained- layer superlattices grown by molecular beam epitaxy on the (001) surfa ce of GaAs substrates. The quantitative determination of strain in eac h type of strained layers was determined from the wavenumber shifts be tween commensurate and incommensurate layers.