CHARACTERIZATION OF DIFFERENT LENGTH SCALES AND PERIODICITIES IN GE SI MICROSTRUCTURES BY RAMAN-SPECTROSCOPY - THEORY AND EXPERIMENT/

The Raman spectra of samples of the type [(GenSim)(N-1) Ge-n Si-M] x p with n approximate to m approximate to 5 monolayers, M approximate to 200 monolayers and p approximate to 10-20 were measured in the backsc attering configuration in the wavenumber range 2-600 cm(-1). The exper imental results are discussed by comparison with simulated spectra cal culated with a linear chain model with bond polarizabilities for the R aman intensities, Comparison between experimental and theoretical spec tra gives insights into the sensitivity of the different Raman peaks a s a probe of periodicity and interface roughness length scales.