HIGH-TEMPERATURE TRANSPORT OF ELECTRONS IN DIAMOND

Authors
Citation
Ma. Osman, HIGH-TEMPERATURE TRANSPORT OF ELECTRONS IN DIAMOND, Physica. B, Condensed matter, 185(1-4), 1993, pp. 471-474
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
185
Issue
1-4
Year of publication
1993
Pages
471 - 474
Database
ISI
SICI code
0921-4526(1993)185:1-4<471:HTOEID>2.0.ZU;2-I
Abstract
The transport parameters of electrons in diamond has been investigated at high temperatures of 500 and 700 K for electric fields ranging fro m 0.4 to 100 kV/cm. It is found that the diffusion coefficient decreas es with increasing temperature and electric fields. The drift velocity at 100 kV/cm decreased from 1.5 x 10(7) to 1.0 x 10(7) cm/s as the te mperature increased from 300 to 700 K. At fields above 50 kV/cm, a non parabolicity factor of 0.25 eV-1 softens excessive heating of the elec trons and the increase in the diffusion coefficient.