ELECTRIC PROPERTIES OF GANZN MIS-TYPE LIGHT-EMITTING DIODE

Under forward-bias condition, the I-V characteristics of a GaN:Zn MIS- type light emitting diode (LED) at room temperature (RT) and at 77 K a nd the temperature dependence of the current were studied. The tempera ture dependence of the current shows that I = I1 + I2 where I1 is the current in the low-temperature range (below 150 K) and is independent of temperature while 1, is the dominant current in the high-temperatur e range and is temperature dependent. The thermal activation of electr on is shown to be 100 meV. The mechanism of the electrical conduction process through this LED was investigated and it is considered that th e I-V characteristics are controlled by the impact excitation induced by electrons tunneling through the triangular barrier.