HIGH-EFFICIENCY ELECTRON-BEAM-PUMPED SEMICONDUCTOR-LASER EMITTERS

Authors
GURSKII AL LUTSENKO EV MITCOVETS AI YABLONSKII GP
Citation
Al. Gurskii et al., HIGH-EFFICIENCY ELECTRON-BEAM-PUMPED SEMICONDUCTOR-LASER EMITTERS, Physica. B, Condensed matter, 185(1-4), 1993, pp. 505-507
Citations number
3
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
185
Issue
1-4
Year of publication
1993
Pages
505 - 507
Database
ISI
SICI code
0921-4526(1993)185:1-4<505:HESE>2.0.ZU;2-L
Abstract
The operational parameters of semiconductor electron-beam-pumped laser s made by a new technology are described. The lasing regimes and the p arameters of electron-beam-pumped semiconductor lasers based on ZnSe, CdSxSe1-x, ZnnCd1-xS, CdTe, GaAs crystals in the 460-900 nm range have been studied. The radiation from these lasers was used to excite gene ration in a number of media.