The operational parameters of semiconductor electron-beam-pumped laser
s made by a new technology are described. The lasing regimes and the p
arameters of electron-beam-pumped semiconductor lasers based on ZnSe,
CdSxSe1-x, ZnnCd1-xS, CdTe, GaAs crystals in the 460-900 nm range have
been studied. The radiation from these lasers was used to excite gene
ration in a number of media.