A series of Cd0.33Zn0.67Te/ZnTe single quantum wells of thickness 40 a
ngstrom, 70 angstrom and 100 angstrom are studied using CW and time-re
solved photoluminescence techniques. The exciton-phonon interaction is
found to decrease with decreasing well thickness, this result having
implications for room temperature devices. Time-resolved measurements
reveal photoluminescence lifetimes increasing with temperature showing
that the recombination at low temperatures is predominantly radiative
. This is an indication of very high material quality. To our knowledg
e, such behaviour has not been observed previously in II-VI materials.