The distribution of components at the interface of a In-ZnTe thin-film
surface-barrier structure has been studied by the Rutherford backscat
tering method. In the process of vacuum evaporation of a metal film, t
he cation and anion atoms of the semiconductor substrate go onto the f
ilm surface and oxidation occurs. It has been found that at mixing of
the components, the stoichiometric composition of the material is prac
tically preserved.