ON THE COMPOSITION AND STRUCTURE OF IN-ZNTE CONTACTS

Authors
KONONENKO VK BOIKO EB TUPENEVICH PA
Citation
Vk. Kononenko et al., ON THE COMPOSITION AND STRUCTURE OF IN-ZNTE CONTACTS, Physica. B, Condensed matter, 185(1-4), 1993, pp. 585-587
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
185
Issue
1-4
Year of publication
1993
Pages
585 - 587
Database
ISI
SICI code
0921-4526(1993)185:1-4<585:OTCASO>2.0.ZU;2-L
Abstract
The distribution of components at the interface of a In-ZnTe thin-film surface-barrier structure has been studied by the Rutherford backscat tering method. In the process of vacuum evaporation of a metal film, t he cation and anion atoms of the semiconductor substrate go onto the f ilm surface and oxidation occurs. It has been found that at mixing of the components, the stoichiometric composition of the material is prac tically preserved.