COMPUTER-SIMULATION OF METAL THIN-FILM EPITAXY

Authors
WANG RP FICHTHORN KA
Citation
Rp. Wang et Ka. Fichthorn, COMPUTER-SIMULATION OF METAL THIN-FILM EPITAXY, Thin solid films, 272(2), 1996, pp. 223-228
Citations number
53
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
272
Issue
2
Year of publication
1996
Pages
223 - 228
Database
ISI
SICI code
0040-6090(1996)272:2<223:COMTE>2.0.ZU;2-C
Abstract
We present a review of our molecular-dynamics simulation studies of ki netic mechanisms in Au/Ag(110) heteroepitaxy and Pt/Pt(111) homoepitax y. Novel and complicated microscopic kinetic phenomena have been revea led, which help to resolve the origins of the unconventional growth mo des in these systems.