We present an ab initio all electron theoretical investigation of the
geometrical and electronic structures of icosahedral Si-60, using STO-
3G, STO-3G, 3-21G and 6-31G basis sets. The effect of the addition of
polarization functions and the increase of the size of the basis set,
in both geometrical and electronic structures, is analysed in detail.
Results are compared to other levels of theory.