FULLERENE ONION FORMATION BY CARBON-ION IMPLANTATION INTO COPPER

Citation
T. Cabioch et al., FULLERENE ONION FORMATION BY CARBON-ION IMPLANTATION INTO COPPER, Synthetic metals, 77(1-3), 1996, pp. 253-256
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Material Science","Polymer Sciences
Journal title
ISSN journal
03796779
Volume
77
Issue
1-3
Year of publication
1996
Pages
253 - 256
Database
ISI
SICI code
0379-6779(1996)77:1-3<253:FOFBCI>2.0.ZU;2-W
Abstract
We have performed high-dose carbon-ion implantations into copper subst rates at high temperature with the objective of producing single cryst alline diamond thin films. An important density of giant carbon onions has been identified in a turbostratic graphite layer formed on the co pper surface. We have characterized these giant fullerenes (up to 1 mu m in diameter) by transmission electron microscopy (TEM), high-resolu tion TEM (HRTEM) and electron energy loss spectroscopy (EELS), and we propose two possible mechanisms of formation of the carbon onions duri ng the implantation process.