DEFECT PRODUCTION IN SILICON IRRADIATED WITH 5.68 GEV XE IONS

Silicon irradiated by 5.68 GeV Xe-129 ions at fluences 5 x 10(11), 5 x 10(12) and 5 x 10(13) cm(-2) has been investigated by spreading resis tance, EPR, optical absorption and X-ray diffraction techniques. The m ost damaged layer has been found at depths from 600 to 620 mu m depend ing on the fluence, what coincides well with the TRIM-calculated proje cted range value R(p) = 616 mu m. Deep tails of electrically active de fects have been found beyond the projected range. The intensities and ranges of these tails increase with the irradiation fluence. No trace of amorphization has been detected by EPR for all the fluences. The ob served peculiarities of the defect production and depth defect distrib ution by the energetic Xe ions lead to a conclusion that most point ra diation defects are created predominantly by nuclear stopping whereas the formation of amorphous areas is strongly suppressed by electronic stopping power.